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| PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT * FEATURES 0.5 dB Noise Figure at 2 GHz 21 dBm P-1dB 2 GHz 17 dB Power Gain at 2 GHz 33 dBm IP3 at 2 GHz 45% Power-Added-Efficiency * DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The FP750's active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for PCS and GSM base station front-ends. * ELECTRICAL SPECIFICATIONS @ TAmbient = 25C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Symbol IDSS P-1dB G-1dB PAE NF Test Conditions VDS = 2 V; VGS = 0 V f=2GHz; VDS = 3.3 V; IDS = 110mA f=2GHz; VDS = 3.3 V; IDS = 110mA f=2GHz; VDS = 3.3 V; IDS = 110mA; POUT = 21 dBm f=2GHz; VDS = 3.3V; 40mA f=2GHz; VDS = 3.3V; IDS = 60mA f=2GHz; VDS = 3.3V; 110mA VDS = 3.3V; IDS = 110mA VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2 mA IGS = 2 mA IGD = 2 mA Min 180 20 16 Typ 220 21 17 45 0.4 0.5 0.7 33 220 5 -1.2 12 13 Max 265 Units mA dBm dB % dB dB dB dBm mS A V V V Output Third-Order Intercept Point Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude IP3 GM IGSO VP |VBDGS| |VBDGD| 170 35 10 10 Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 2/01/02 Email: sales@filss.com PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT * ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: * * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- TAmbient = 22 3 C Min Max 5 -3 IDSS 7.5 175 175 175 1.0 Units V V mA mA mW C C W -65 * * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT = 1.0W - (0.007W/C) x TPACK where TPACK = source tab lead temperature. This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. * Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 2/01/02 Email: sales@filss.com PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT * PACKAGE OUTLINE (dimensions in mm) SOURCE GATE DRAIN SOURCE All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 2/01/02 Email: sales@filss.com |
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